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Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr0.2Ti0.8O3/Co/Pt Heterostructure
Zengyao Ren;   Mengxi Wang;   Pengfei Liu;   Qi Liu;   Kaiyou Wang;   Gehard Jakob;   Jikun Chen;   Kangkang Meng;   Xiaoguang Xu;   Jun Miao;   Yong Jiang
2020
Source PublicationADVANCED ELECTRONIC MATERIALS
Volume6Issue:6Pages:2000102
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/30392
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Zengyao Ren; Mengxi Wang; Pengfei Liu; Qi Liu; Kaiyou Wang; Gehard Jakob; Jikun Chen; Kangkang Meng; Xiaoguang Xu; Jun Miao; Yong Jiang. Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr0.2Ti0.8O3/Co/Pt Heterostructure[J]. ADVANCED ELECTRONIC MATERIALS,2020,6(6):2000102.
APA Zengyao Ren; Mengxi Wang; Pengfei Liu; Qi Liu; Kaiyou Wang; Gehard Jakob; Jikun Chen; Kangkang Meng; Xiaoguang Xu; Jun Miao; Yong Jiang.(2020).Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr0.2Ti0.8O3/Co/Pt Heterostructure.ADVANCED ELECTRONIC MATERIALS,6(6),2000102.
MLA Zengyao Ren; Mengxi Wang; Pengfei Liu; Qi Liu; Kaiyou Wang; Gehard Jakob; Jikun Chen; Kangkang Meng; Xiaoguang Xu; Jun Miao; Yong Jiang."Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr0.2Ti0.8O3/Co/Pt Heterostructure".ADVANCED ELECTRONIC MATERIALS 6.6(2020):2000102.
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