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Realization of fast switching speed and electronic synapse in Ta/TaOx/AlN/Pt bipolar resistive memory
Gang Cao;   Xiaobing Yan;   Jingjuan Wang;   Zhenyu Zhou;   Jianzhong Lou;   Kaiyou Wang
2020
Source PublicationAIP ADVANCES
Volume10Issue:5Pages:055312
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/30304
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Gang Cao; Xiaobing Yan; Jingjuan Wang; Zhenyu Zhou; Jianzhong Lou; Kaiyou Wang. Realization of fast switching speed and electronic synapse in Ta/TaOx/AlN/Pt bipolar resistive memory[J]. AIP ADVANCES,2020,10(5):055312.
APA Gang Cao; Xiaobing Yan; Jingjuan Wang; Zhenyu Zhou; Jianzhong Lou; Kaiyou Wang.(2020).Realization of fast switching speed and electronic synapse in Ta/TaOx/AlN/Pt bipolar resistive memory.AIP ADVANCES,10(5),055312.
MLA Gang Cao; Xiaobing Yan; Jingjuan Wang; Zhenyu Zhou; Jianzhong Lou; Kaiyou Wang."Realization of fast switching speed and electronic synapse in Ta/TaOx/AlN/Pt bipolar resistive memory".AIP ADVANCES 10.5(2020):055312.
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