SEMI OpenIR  > 中科院半导体材料科学重点实验室
Real-time in situ observation of extended defect evolution near a crack tip in GaSb crystal under thermal loading
Yingbin Zhu;   Huihui Wen;   Hongye Zhang;   Zhanwei Liu;   Chao Liu;   Shuman Liu
2020
Source PublicationAPPLIED SURFACE SCIENCE
Volume515Pages:145934
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/30227
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Yingbin Zhu; Huihui Wen; Hongye Zhang; Zhanwei Liu; Chao Liu; Shuman Liu. Real-time in situ observation of extended defect evolution near a crack tip in GaSb crystal under thermal loading[J]. APPLIED SURFACE SCIENCE,2020,515:145934.
APA Yingbin Zhu; Huihui Wen; Hongye Zhang; Zhanwei Liu; Chao Liu; Shuman Liu.(2020).Real-time in situ observation of extended defect evolution near a crack tip in GaSb crystal under thermal loading.APPLIED SURFACE SCIENCE,515,145934.
MLA Yingbin Zhu; Huihui Wen; Hongye Zhang; Zhanwei Liu; Chao Liu; Shuman Liu."Real-time in situ observation of extended defect evolution near a crack tip in GaSb crystal under thermal loading".APPLIED SURFACE SCIENCE 515(2020):145934.
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