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Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
Xiang Zhang ;   Zhaolong Chen ;   Hongliang Chang;   Jianchang Yan ;   Shenyuan Yang ;   Junxi Wang ;   Peng Gao;   Tongbo Wei
2020
Source PublicationJOVE-JOURNAL OF VISUALIZED EXPERIMENTS
Volume160Pages:e60167
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/30205
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Xiang Zhang ; Zhaolong Chen ; Hongliang Chang; Jianchang Yan ; Shenyuan Yang ; Junxi Wang ; Peng Gao; Tongbo Wei. Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes[J]. JOVE-JOURNAL OF VISUALIZED EXPERIMENTS,2020,160:e60167.
APA Xiang Zhang ; Zhaolong Chen ; Hongliang Chang; Jianchang Yan ; Shenyuan Yang ; Junxi Wang ; Peng Gao; Tongbo Wei.(2020).Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes.JOVE-JOURNAL OF VISUALIZED EXPERIMENTS,160,e60167.
MLA Xiang Zhang ; Zhaolong Chen ; Hongliang Chang; Jianchang Yan ; Shenyuan Yang ; Junxi Wang ; Peng Gao; Tongbo Wei."Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes".JOVE-JOURNAL OF VISUALIZED EXPERIMENTS 160(2020):e60167.
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