SEMI OpenIR  > 半导体超晶格国家重点实验室
Interface-engineering enhanced light emission from Si/Ge quantum dots
Zhi-Min Ji;  Jun-Wei Luo;   Shu-Shen Li
2020
Source PublicationNEW JOURNAL OF PHYSICS
Volume22Issue:9Pages:093037
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/30133
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Zhi-Min Ji;Jun-Wei Luo; Shu-Shen Li. Interface-engineering enhanced light emission from Si/Ge quantum dots[J]. NEW JOURNAL OF PHYSICS,2020,22(9):093037.
APA Zhi-Min Ji;Jun-Wei Luo; Shu-Shen Li.(2020).Interface-engineering enhanced light emission from Si/Ge quantum dots.NEW JOURNAL OF PHYSICS,22(9),093037.
MLA Zhi-Min Ji;Jun-Wei Luo; Shu-Shen Li."Interface-engineering enhanced light emission from Si/Ge quantum dots".NEW JOURNAL OF PHYSICS 22.9(2020):093037.
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