SEMI OpenIR  > 中科院半导体材料科学重点实验室
Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H–SiC
Zhanwei Shen;   Feng Zhang;   Jun Chen;   Zhao Fu;   Xingfang Liu;   Guoguo Yan;   Bowen Lv;   Yinshu Wang;   Lei Wang;  Wanshun Zhao;   Guosheng Sun;   Yiping Zeng
2020
Source PublicationAPPLIED PHYSICS LETTERS
Volume117Issue:10Pages:102105
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/30126
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Zhanwei Shen; Feng Zhang; Jun Chen; Zhao Fu; Xingfang Liu; Guoguo Yan; Bowen Lv; Yinshu Wang; Lei Wang;Wanshun Zhao; Guosheng Sun; Yiping Zeng. Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H–SiC[J]. APPLIED PHYSICS LETTERS,2020,117(10):102105.
APA Zhanwei Shen; Feng Zhang; Jun Chen; Zhao Fu; Xingfang Liu; Guoguo Yan; Bowen Lv; Yinshu Wang; Lei Wang;Wanshun Zhao; Guosheng Sun; Yiping Zeng.(2020).Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H–SiC.APPLIED PHYSICS LETTERS,117(10),102105.
MLA Zhanwei Shen; Feng Zhang; Jun Chen; Zhao Fu; Xingfang Liu; Guoguo Yan; Bowen Lv; Yinshu Wang; Lei Wang;Wanshun Zhao; Guosheng Sun; Yiping Zeng."Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H–SiC".APPLIED PHYSICS LETTERS 117.10(2020):102105.
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