SEMI OpenIR  > 中科院半导体材料科学重点实验室
Domino Effect of Thickness Fluctuation on Subband Structure and Electron Transport within Semiconductor Cascade Structures
Yunhao Zhao;   Jinchuan Zhang;   Chenyuan Cai;   Jie Chen;   Xuebing Zhao;   Chongyun Liang;   Fengqi Liu;   Yi Shi;   Xianhu Liu;   Renchao Che
2020
Source PublicationACS APPLIED MATERIALS & INTERFACES
Volume12Issue:37Pages:41950-41959
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/30112
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Yunhao Zhao; Jinchuan Zhang; Chenyuan Cai; Jie Chen; Xuebing Zhao; Chongyun Liang; Fengqi Liu; Yi Shi; Xianhu Liu; Renchao Che. Domino Effect of Thickness Fluctuation on Subband Structure and Electron Transport within Semiconductor Cascade Structures[J]. ACS APPLIED MATERIALS & INTERFACES,2020,12(37):41950-41959.
APA Yunhao Zhao; Jinchuan Zhang; Chenyuan Cai; Jie Chen; Xuebing Zhao; Chongyun Liang; Fengqi Liu; Yi Shi; Xianhu Liu; Renchao Che.(2020).Domino Effect of Thickness Fluctuation on Subband Structure and Electron Transport within Semiconductor Cascade Structures.ACS APPLIED MATERIALS & INTERFACES,12(37),41950-41959.
MLA Yunhao Zhao; Jinchuan Zhang; Chenyuan Cai; Jie Chen; Xuebing Zhao; Chongyun Liang; Fengqi Liu; Yi Shi; Xianhu Liu; Renchao Che."Domino Effect of Thickness Fluctuation on Subband Structure and Electron Transport within Semiconductor Cascade Structures".ACS APPLIED MATERIALS & INTERFACES 12.37(2020):41950-41959.
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