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Freestanding GaN substrate enabled by dual-stack multilayer graphene via hydride vapor phase epitaxy
Jie Su;   Dongdong Liang;   Yun Zhao;   Jiankun Yang;   Hongliang Chang;   Ruifei Duan;   Junxi Wang;   Lianfeng Sun;   Tongbo Wei
2020
Source PublicationApplied Surface Science
Volume526Pages:146747
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/30097
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Jie Su; Dongdong Liang; Yun Zhao; Jiankun Yang; Hongliang Chang; Ruifei Duan; Junxi Wang; Lianfeng Sun; Tongbo Wei. Freestanding GaN substrate enabled by dual-stack multilayer graphene via hydride vapor phase epitaxy[J]. Applied Surface Science,2020,526:146747.
APA Jie Su; Dongdong Liang; Yun Zhao; Jiankun Yang; Hongliang Chang; Ruifei Duan; Junxi Wang; Lianfeng Sun; Tongbo Wei.(2020).Freestanding GaN substrate enabled by dual-stack multilayer graphene via hydride vapor phase epitaxy.Applied Surface Science,526,146747.
MLA Jie Su; Dongdong Liang; Yun Zhao; Jiankun Yang; Hongliang Chang; Ruifei Duan; Junxi Wang; Lianfeng Sun; Tongbo Wei."Freestanding GaN substrate enabled by dual-stack multilayer graphene via hydride vapor phase epitaxy".Applied Surface Science 526(2020):146747.
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