SEMI OpenIR  > 中科院半导体材料科学重点实验室
HCl-H2SO4-H2O solution etching behavior of InAs (1 0 0) surface
Guiying Shen;   Youwen Zhao;   Jing Sun;   Jingming Liu;   Hui Xie;   Jun Yang;  Zhiyuan Dong
2020
Source PublicationJOURNAL OF CRYSTAL GROWTH
Volume547Pages:125800
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/30096
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Guiying Shen; Youwen Zhao; Jing Sun; Jingming Liu; Hui Xie; Jun Yang;Zhiyuan Dong. HCl-H2SO4-H2O solution etching behavior of InAs (1 0 0) surface[J]. JOURNAL OF CRYSTAL GROWTH,2020,547:125800.
APA Guiying Shen; Youwen Zhao; Jing Sun; Jingming Liu; Hui Xie; Jun Yang;Zhiyuan Dong.(2020).HCl-H2SO4-H2O solution etching behavior of InAs (1 0 0) surface.JOURNAL OF CRYSTAL GROWTH,547,125800.
MLA Guiying Shen; Youwen Zhao; Jing Sun; Jingming Liu; Hui Xie; Jun Yang;Zhiyuan Dong."HCl-H2SO4-H2O solution etching behavior of InAs (1 0 0) surface".JOURNAL OF CRYSTAL GROWTH 547(2020):125800.
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