SEMI OpenIR  > 中科院半导体材料科学重点实验室
High-Frequency Switching Properties and Low Oxide Electric Field and Energy Loss in a Reverse-Channel 4H-SiC UMOSFET
Zhanwei Shen;   Feng Zhang ;   Member;   IEEE;   Guoguo Yan;   Zhengxin Wen;   Wanshun Zhao;   Lei Wang;   Xingfang Liu;   Guosheng Sun;   Yiping Zeng
2020
Source PublicationIEEE TRANSACTIONS ON ELECTRON DEVICES
Volume67Issue:10Pages:4046-4053
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/30092
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Zhanwei Shen; Feng Zhang ; Member; IEEE; Guoguo Yan; Zhengxin Wen; Wanshun Zhao; Lei Wang; Xingfang Liu; Guosheng Sun; Yiping Zeng. High-Frequency Switching Properties and Low Oxide Electric Field and Energy Loss in a Reverse-Channel 4H-SiC UMOSFET[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2020,67(10):4046-4053.
APA Zhanwei Shen; Feng Zhang ; Member; IEEE; Guoguo Yan; Zhengxin Wen; Wanshun Zhao; Lei Wang; Xingfang Liu; Guosheng Sun; Yiping Zeng.(2020).High-Frequency Switching Properties and Low Oxide Electric Field and Energy Loss in a Reverse-Channel 4H-SiC UMOSFET.IEEE TRANSACTIONS ON ELECTRON DEVICES,67(10),4046-4053.
MLA Zhanwei Shen; Feng Zhang ; Member; IEEE; Guoguo Yan; Zhengxin Wen; Wanshun Zhao; Lei Wang; Xingfang Liu; Guosheng Sun; Yiping Zeng."High-Frequency Switching Properties and Low Oxide Electric Field and Energy Loss in a Reverse-Channel 4H-SiC UMOSFET".IEEE TRANSACTIONS ON ELECTRON DEVICES 67.10(2020):4046-4053.
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