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Hybrid-gate structure designed for high-performance normally-off p-GaN high-electron-mobility transistor
Di Niu;   Quan Wang;   Wei Li;   Changxi Chen;   Jiankai Xu;   Lijuan Jiang;   Chun Feng;   Hongling Xiao;   Qian Wang;   Xiangang Xu;   Xiaoliang Wang
2020
Source PublicationJapanese Journal of Applied Physics
Volume59Issue:11Pages:111001
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/30051
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Di Niu; Quan Wang; Wei Li; Changxi Chen; Jiankai Xu; Lijuan Jiang; Chun Feng; Hongling Xiao; Qian Wang; Xiangang Xu; Xiaoliang Wang. Hybrid-gate structure designed for high-performance normally-off p-GaN high-electron-mobility transistor[J]. Japanese Journal of Applied Physics,2020,59(11):111001.
APA Di Niu; Quan Wang; Wei Li; Changxi Chen; Jiankai Xu; Lijuan Jiang; Chun Feng; Hongling Xiao; Qian Wang; Xiangang Xu; Xiaoliang Wang.(2020).Hybrid-gate structure designed for high-performance normally-off p-GaN high-electron-mobility transistor.Japanese Journal of Applied Physics,59(11),111001.
MLA Di Niu; Quan Wang; Wei Li; Changxi Chen; Jiankai Xu; Lijuan Jiang; Chun Feng; Hongling Xiao; Qian Wang; Xiangang Xu; Xiaoliang Wang."Hybrid-gate structure designed for high-performance normally-off p-GaN high-electron-mobility transistor".Japanese Journal of Applied Physics 59.11(2020):111001.
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