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1.3 μm p-Modulation Doped InGaAs/GaAs Quantum Dot Lasers with High Speed Direct Modulation Rate and Strong Optical Feedback Resistance
Xia-Yida MaXueer;   Yi-Ming He;   Zun-Ren Lv;   Zhong-Kai Zhang;   Hong-Yu Chai;   Dan Lu;   Xiao-Guang Yang;   Tao Yang
2020
Source PublicationCRYSTALS
Volume10Issue:11Pages:980
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/30040
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Xia-Yida MaXueer; Yi-Ming He; Zun-Ren Lv; Zhong-Kai Zhang; Hong-Yu Chai; Dan Lu; Xiao-Guang Yang; Tao Yang;. 1.3 μm p-Modulation Doped InGaAs/GaAs Quantum Dot Lasers with High Speed Direct Modulation Rate and Strong Optical Feedback Resistance[J]. CRYSTALS,2020,10(11):980.
APA Xia-Yida MaXueer; Yi-Ming He; Zun-Ren Lv; Zhong-Kai Zhang; Hong-Yu Chai; Dan Lu; Xiao-Guang Yang; Tao Yang;.(2020).1.3 μm p-Modulation Doped InGaAs/GaAs Quantum Dot Lasers with High Speed Direct Modulation Rate and Strong Optical Feedback Resistance.CRYSTALS,10(11),980.
MLA Xia-Yida MaXueer; Yi-Ming He; Zun-Ren Lv; Zhong-Kai Zhang; Hong-Yu Chai; Dan Lu; Xiao-Guang Yang; Tao Yang;."1.3 μm p-Modulation Doped InGaAs/GaAs Quantum Dot Lasers with High Speed Direct Modulation Rate and Strong Optical Feedback Resistance".CRYSTALS 10.11(2020):980.
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