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Fabrication of high quantum efficiency p-i-n AlGaN detector and optimization of p-layer and i-layer thickness
Zikun Cao;   Degang Zhao;   Feng Liang;   Zongshun Liu
2020
Source PublicationMATERIALS RESEARCH EXPRESS
Volume7Issue:11Pages:115902
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/30035
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Zikun Cao; Degang Zhao; Feng Liang; Zongshun Liu. Fabrication of high quantum efficiency p-i-n AlGaN detector and optimization of p-layer and i-layer thickness[J]. MATERIALS RESEARCH EXPRESS,2020,7(11):115902.
APA Zikun Cao; Degang Zhao; Feng Liang; Zongshun Liu.(2020).Fabrication of high quantum efficiency p-i-n AlGaN detector and optimization of p-layer and i-layer thickness.MATERIALS RESEARCH EXPRESS,7(11),115902.
MLA Zikun Cao; Degang Zhao; Feng Liang; Zongshun Liu."Fabrication of high quantum efficiency p-i-n AlGaN detector and optimization of p-layer and i-layer thickness".MATERIALS RESEARCH EXPRESS 7.11(2020):115902.
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