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High-performance 5.1 nm in-plane Janus WSeTe Schottky barrier field effect transistors
Zhi-Qiang Fan;   Zhen-Hua Zhang;   Shen-Yuan Yang
2020
Source PublicationNANOSCALE
Volume12Issue:42Pages:21750-21756
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/30023
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Zhi-Qiang Fan; Zhen-Hua Zhang; Shen-Yuan Yang. High-performance 5.1 nm in-plane Janus WSeTe Schottky barrier field effect transistors[J]. NANOSCALE,2020,12(42):21750-21756.
APA Zhi-Qiang Fan; Zhen-Hua Zhang; Shen-Yuan Yang.(2020).High-performance 5.1 nm in-plane Janus WSeTe Schottky barrier field effect transistors.NANOSCALE,12(42),21750-21756.
MLA Zhi-Qiang Fan; Zhen-Hua Zhang; Shen-Yuan Yang."High-performance 5.1 nm in-plane Janus WSeTe Schottky barrier field effect transistors".NANOSCALE 12.42(2020):21750-21756.
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