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Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 μm LEDs
Linzhi Peng ;   Xiuli Li ;   Jun Zheng ;   Xiangquan Liu ;   Mingming Li ;   Zhi Liu ;   Chunlai Xue ;   Yuhua Zuo ;   Buwen Cheng
2020
Source PublicationJournal of Luminescence
Volume228Pages:117539
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/30008
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Linzhi Peng ; Xiuli Li ; Jun Zheng ; Xiangquan Liu ; Mingming Li ; Zhi Liu ; Chunlai Xue ; Yuhua Zuo ; Buwen Cheng. Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 μm LEDs[J]. Journal of Luminescence,2020,228:117539.
APA Linzhi Peng ; Xiuli Li ; Jun Zheng ; Xiangquan Liu ; Mingming Li ; Zhi Liu ; Chunlai Xue ; Yuhua Zuo ; Buwen Cheng.(2020).Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 μm LEDs.Journal of Luminescence,228,117539.
MLA Linzhi Peng ; Xiuli Li ; Jun Zheng ; Xiangquan Liu ; Mingming Li ; Zhi Liu ; Chunlai Xue ; Yuhua Zuo ; Buwen Cheng."Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 μm LEDs".Journal of Luminescence 228(2020):117539.
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