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The investigations to eliminate the bias dependency of quantum efficiency of InGaAsSb nBn photodetectors for extended short wavelength infrared detection
Nong Li;   Weiqiang Chen;   Danong Zheng;   Ju Sun;   Qingxuan Jia;   Junkai Jiang;   Guowei Wanga;   Dongwei Jianga;   Yingqiang Xua;   Zhichuan Niu
2020
Source PublicationInfrared Physics & Technology
Volume111Pages:103461
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/30004
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Nong Li; Weiqiang Chen; Danong Zheng; Ju Sun; Qingxuan Jia; Junkai Jiang; Guowei Wanga; Dongwei Jianga; Yingqiang Xua; Zhichuan Niu. The investigations to eliminate the bias dependency of quantum efficiency of InGaAsSb nBn photodetectors for extended short wavelength infrared detection[J]. Infrared Physics & Technology,2020,111:103461.
APA Nong Li; Weiqiang Chen; Danong Zheng; Ju Sun; Qingxuan Jia; Junkai Jiang; Guowei Wanga; Dongwei Jianga; Yingqiang Xua; Zhichuan Niu.(2020).The investigations to eliminate the bias dependency of quantum efficiency of InGaAsSb nBn photodetectors for extended short wavelength infrared detection.Infrared Physics & Technology,111,103461.
MLA Nong Li; Weiqiang Chen; Danong Zheng; Ju Sun; Qingxuan Jia; Junkai Jiang; Guowei Wanga; Dongwei Jianga; Yingqiang Xua; Zhichuan Niu."The investigations to eliminate the bias dependency of quantum efficiency of InGaAsSb nBn photodetectors for extended short wavelength infrared detection".Infrared Physics & Technology 111(2020):103461.
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