SEMI OpenIR  > 半导体超晶格国家重点实验室
Valley-dependent properties of monolayer MoSi2N4, WSi2N4, and MoSi2As4
Li, S (Li, Si);   Wu, WK (Wu, Weikang);   Feng, XL (Feng, Xiaolong);   Guan, S (Guan, Shan);   Feng, WX (Feng, Wanxiang);   Yao, YG (Yao, Yugui);   Yang, SA (Yang, Shengyuan A.)
2020
Source PublicationPHYSICAL REVIEW B
Volume102Pages:235435
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29983
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Li, S . Valley-dependent properties of monolayer MoSi2N4, WSi2N4, and MoSi2As4[J]. PHYSICAL REVIEW B,2020,102:235435.
APA Li, S .(2020).Valley-dependent properties of monolayer MoSi2N4, WSi2N4, and MoSi2As4.PHYSICAL REVIEW B,102,235435.
MLA Li, S ."Valley-dependent properties of monolayer MoSi2N4, WSi2N4, and MoSi2As4".PHYSICAL REVIEW B 102(2020):235435.
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