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Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers
Yuan Ye;  Su Xiang-Bin;  Yang Cheng-ao;  Zhang Yi;  Shang Jin-Ming;  Xie Sheng-Wen;  Zhang Yu;  Ni Hai-Qiao;  Xu Ying-Qiang;  Nil Zhi-Chuan
2020
Source PublicationJ. Infrared Millim. Waves
Volume39Issue:6Pages:667~670
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29973
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Yuan Ye;Su Xiang-Bin;Yang Cheng-ao;Zhang Yi;Shang Jin-Ming;Xie Sheng-Wen;Zhang Yu;Ni Hai-Qiao;Xu Ying-Qiang;Nil Zhi-Chuan. Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers[J]. J. Infrared Millim. Waves,2020,39(6):667~670.
APA Yuan Ye;Su Xiang-Bin;Yang Cheng-ao;Zhang Yi;Shang Jin-Ming;Xie Sheng-Wen;Zhang Yu;Ni Hai-Qiao;Xu Ying-Qiang;Nil Zhi-Chuan.(2020).Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers.J. Infrared Millim. Waves,39(6),667~670.
MLA Yuan Ye;Su Xiang-Bin;Yang Cheng-ao;Zhang Yi;Shang Jin-Ming;Xie Sheng-Wen;Zhang Yu;Ni Hai-Qiao;Xu Ying-Qiang;Nil Zhi-Chuan."Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers".J. Infrared Millim. Waves 39.6(2020):667~670.
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