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Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor
Ya-Mei Dou ;   Wei-Hua Han ;   Yang-Yan Guo ;   Xiao-Song Zhao ;   Xiao-Di Zhang ;   Xin-Yu Wu ;   Fu-Hua Yang
2019
Source PublicationChinese Physics B
Volume28Issue:6Pages:066804
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29842
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
Ya-Mei Dou ; Wei-Hua Han ; Yang-Yan Guo ; Xiao-Song Zhao ; Xiao-Di Zhang ; Xin-Yu Wu ; Fu-Hua Yang. Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor[J]. Chinese Physics B,2019,28(6):066804.
APA Ya-Mei Dou ; Wei-Hua Han ; Yang-Yan Guo ; Xiao-Song Zhao ; Xiao-Di Zhang ; Xin-Yu Wu ; Fu-Hua Yang.(2019).Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor.Chinese Physics B,28(6),066804.
MLA Ya-Mei Dou ; Wei-Hua Han ; Yang-Yan Guo ; Xiao-Song Zhao ; Xiao-Di Zhang ; Xin-Yu Wu ; Fu-Hua Yang."Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor".Chinese Physics B 28.6(2019):066804.
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