| Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor | |
| Ya-Mei Dou ; Wei-Hua Han ; Yang-Yan Guo ; Xiao-Song Zhao ; Xiao-Di Zhang ; Xin-Yu Wu ; Fu-Hua Yang | |
| 2019 | |
| Source Publication | Chinese Physics B
 |
| Volume | 28Issue:6Pages:066804 |
| Indexed By | SCI |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/29842 |
| Collection | 半导体集成技术工程研究中心 |
| Recommended Citation GB/T 7714 | Ya-Mei Dou ; Wei-Hua Han ; Yang-Yan Guo ; Xiao-Song Zhao ; Xiao-Di Zhang ; Xin-Yu Wu ; Fu-Hua Yang. Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor[J]. Chinese Physics B,2019,28(6):066804. |
| APA | Ya-Mei Dou ; Wei-Hua Han ; Yang-Yan Guo ; Xiao-Song Zhao ; Xiao-Di Zhang ; Xin-Yu Wu ; Fu-Hua Yang.(2019).Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor.Chinese Physics B,28(6),066804. |
| MLA | Ya-Mei Dou ; Wei-Hua Han ; Yang-Yan Guo ; Xiao-Song Zhao ; Xiao-Di Zhang ; Xin-Yu Wu ; Fu-Hua Yang."Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor".Chinese Physics B 28.6(2019):066804. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Temperature-dependen（451KB） | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text | |
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