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High-performance nanoporous-GaN metal-insulator-semiconductor ultraviolet photodetectors with a thermal oxidized β-Ga 2 O 3 layer
Ruilin Meng;   Xiaoli Ji;   Zheng Lou;   Jiankun Yang;   Yonghui Zhang;   Zihui Zhang;   Wengang Bi;   Junxi Wang;   Tongbo Wei
2019
Source PublicationOptics Letters
Volume44Issue:9Pages:2197-2200
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29835
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Ruilin Meng; Xiaoli Ji; Zheng Lou; Jiankun Yang; Yonghui Zhang; Zihui Zhang; Wengang Bi; Junxi Wang; Tongbo Wei. High-performance nanoporous-GaN metal-insulator-semiconductor ultraviolet photodetectors with a thermal oxidized β-Ga 2 O 3 layer[J]. Optics Letters,2019,44(9):2197-2200.
APA Ruilin Meng; Xiaoli Ji; Zheng Lou; Jiankun Yang; Yonghui Zhang; Zihui Zhang; Wengang Bi; Junxi Wang; Tongbo Wei.(2019).High-performance nanoporous-GaN metal-insulator-semiconductor ultraviolet photodetectors with a thermal oxidized β-Ga 2 O 3 layer.Optics Letters,44(9),2197-2200.
MLA Ruilin Meng; Xiaoli Ji; Zheng Lou; Jiankun Yang; Yonghui Zhang; Zihui Zhang; Wengang Bi; Junxi Wang; Tongbo Wei."High-performance nanoporous-GaN metal-insulator-semiconductor ultraviolet photodetectors with a thermal oxidized β-Ga 2 O 3 layer".Optics Letters 44.9(2019):2197-2200.
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