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High quality GaN epitaxial growth on β -Ga 2 O 3 substrate enabled by self- assembled SiO 2 nanospheres
Xiang Zhang ;   Tongbo Wei ;   Kuankuan Ren ;  Zhuo Xiong ;   Weijiang Li ;   Chao Yang ;   Liang Zhang ;   Junxi Wang
2019
Source PublicationJournal of Crystal Growth
Volume525Pages:125211
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29823
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Xiang Zhang ; Tongbo Wei ; Kuankuan Ren ;Zhuo Xiong ; Weijiang Li ; Chao Yang ; Liang Zhang ; Junxi Wang. High quality GaN epitaxial growth on β -Ga 2 O 3 substrate enabled by self- assembled SiO 2 nanospheres[J]. Journal of Crystal Growth,2019,525:125211.
APA Xiang Zhang ; Tongbo Wei ; Kuankuan Ren ;Zhuo Xiong ; Weijiang Li ; Chao Yang ; Liang Zhang ; Junxi Wang.(2019).High quality GaN epitaxial growth on β -Ga 2 O 3 substrate enabled by self- assembled SiO 2 nanospheres.Journal of Crystal Growth,525,125211.
MLA Xiang Zhang ; Tongbo Wei ; Kuankuan Ren ;Zhuo Xiong ; Weijiang Li ; Chao Yang ; Liang Zhang ; Junxi Wang."High quality GaN epitaxial growth on β -Ga 2 O 3 substrate enabled by self- assembled SiO 2 nanospheres".Journal of Crystal Growth 525(2019):125211.
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张翔High quality GaN e(1148KB)期刊论文作者接受稿限制开放CC BY-NC-SAApplication Full Text
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