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AlGaN Nanowires Grown on SiO 2 /Si (100) Using Graphene as a Buffer Layer
Yunyu Wang;   Dasa Dheeraj;   Zhiqiang Liu;   Meng Liang;   Yang Li;   Xiaoyan Yi;   Junxi Wang;   Jinmin Li;   Helge Weman
2019
Source PublicationCrystal Growth and Design
Volume19Issue:10Pages:5516-5522
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29813
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Yunyu Wang; Dasa Dheeraj; Zhiqiang Liu; Meng Liang; Yang Li; Xiaoyan Yi; Junxi Wang; Jinmin Li; Helge Weman;. AlGaN Nanowires Grown on SiO 2 /Si (100) Using Graphene as a Buffer Layer[J]. Crystal Growth and Design,2019,19(10):5516-5522.
APA Yunyu Wang; Dasa Dheeraj; Zhiqiang Liu; Meng Liang; Yang Li; Xiaoyan Yi; Junxi Wang; Jinmin Li; Helge Weman;.(2019).AlGaN Nanowires Grown on SiO 2 /Si (100) Using Graphene as a Buffer Layer.Crystal Growth and Design,19(10),5516-5522.
MLA Yunyu Wang; Dasa Dheeraj; Zhiqiang Liu; Meng Liang; Yang Li; Xiaoyan Yi; Junxi Wang; Jinmin Li; Helge Weman;."AlGaN Nanowires Grown on SiO 2 /Si (100) Using Graphene as a Buffer Layer".Crystal Growth and Design 19.10(2019):5516-5522.
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王蕴玉-AlGaN Nanowires (9986KB)期刊论文作者接受稿限制开放CC BY-NC-SAApplication Full Text
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