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Discrete energy states induced broadband emission from self-assembly InGaN quantum dots
Xiaoli Ji ;   Xiaoyu Tan ;   Tongbo Wei ;   Hongxi Lu ;   Junxi Wang ;   Fuhua Yang ;   Jinmin Li
2019
Source PublicationOptical Materials
Volume94Pages:237-240
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29799
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Xiaoli Ji ; Xiaoyu Tan ; Tongbo Wei ; Hongxi Lu ; Junxi Wang ; Fuhua Yang ; Jinmin Li. Discrete energy states induced broadband emission from self-assembly InGaN quantum dots[J]. Optical Materials,2019,94:237-240.
APA Xiaoli Ji ; Xiaoyu Tan ; Tongbo Wei ; Hongxi Lu ; Junxi Wang ; Fuhua Yang ; Jinmin Li.(2019).Discrete energy states induced broadband emission from self-assembly InGaN quantum dots.Optical Materials,94,237-240.
MLA Xiaoli Ji ; Xiaoyu Tan ; Tongbo Wei ; Hongxi Lu ; Junxi Wang ; Fuhua Yang ; Jinmin Li."Discrete energy states induced broadband emission from self-assembly InGaN quantum dots".Optical Materials 94(2019):237-240.
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姬小利Discrete energy s(1252KB)期刊论文作者接受稿限制开放CC BY-NC-SAApplication Full Text
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