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Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in silicon junctionless nanowire transistors
Yang-Yan Guo;  Wei-Hua Han;  Xiao-Song Zhao;  Ya-Mei Dou;  Xiao-Di Zhang;  Xin-Yu Wu ;   Fu-Hua Yang
2019
Source PublicationChinese Physics B
Volume28Issue:10Pages:107303
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29762
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
Yang-Yan Guo;Wei-Hua Han;Xiao-Song Zhao;Ya-Mei Dou;Xiao-Di Zhang;Xin-Yu Wu ; Fu-Hua Yang. Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in silicon junctionless nanowire transistors[J]. Chinese Physics B,2019,28(10):107303.
APA Yang-Yan Guo;Wei-Hua Han;Xiao-Song Zhao;Ya-Mei Dou;Xiao-Di Zhang;Xin-Yu Wu ; Fu-Hua Yang.(2019).Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in silicon junctionless nanowire transistors.Chinese Physics B,28(10),107303.
MLA Yang-Yan Guo;Wei-Hua Han;Xiao-Song Zhao;Ya-Mei Dou;Xiao-Di Zhang;Xin-Yu Wu ; Fu-Hua Yang."Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in silicon junctionless nanowire transistors".Chinese Physics B 28.10(2019):107303.
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