Growth of single crystalline GePb film on Ge substrate by magnetron sputtering epitaxy | |
Xiangquan Liu ; Jun Zheng ; Lin Zhou ; Zhi Liu ; Yuhua Zuo ; Chunlai Xue ; Buwen Cheng | |
2019 | |
Source Publication | Journal of Alloys and Compounds
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Volume | 785Pages:228-231 |
Indexed By | SCI |
Language | 英语 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/29743 |
Collection | 光电子研究发展中心 |
Recommended Citation GB/T 7714 | Xiangquan Liu ; Jun Zheng ; Lin Zhou ; Zhi Liu ; Yuhua Zuo ; Chunlai Xue ; Buwen Cheng. Growth of single crystalline GePb film on Ge substrate by magnetron sputtering epitaxy[J]. Journal of Alloys and Compounds,2019,785:228-231. |
APA | Xiangquan Liu ; Jun Zheng ; Lin Zhou ; Zhi Liu ; Yuhua Zuo ; Chunlai Xue ; Buwen Cheng.(2019).Growth of single crystalline GePb film on Ge substrate by magnetron sputtering epitaxy.Journal of Alloys and Compounds,785,228-231. |
MLA | Xiangquan Liu ; Jun Zheng ; Lin Zhou ; Zhi Liu ; Yuhua Zuo ; Chunlai Xue ; Buwen Cheng."Growth of single crystalline GePb film on Ge substrate by magnetron sputtering epitaxy".Journal of Alloys and Compounds 785(2019):228-231. |
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Growth of single cry(1446KB) | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text |
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