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Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence
Yao Xing ;   Degang Zhao ;   Desheng Jiang ;   Zongshun Liu ;   Jianjun Zhu ;   Ping Chen ;   Jing Yang ;   Feng Liang ;   Shuangtao Liu ;   Liqun Zhang
2019
Source PublicationNANOSCALE RESEARCH LETTERS
Volume14Pages:88
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29739
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Yao Xing ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Ping Chen ; Jing Yang ; Feng Liang ; Shuangtao Liu ; Liqun Zhang. Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence[J]. NANOSCALE RESEARCH LETTERS,2019,14:88.
APA Yao Xing ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Ping Chen ; Jing Yang ; Feng Liang ; Shuangtao Liu ; Liqun Zhang.(2019).Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence.NANOSCALE RESEARCH LETTERS,14,88.
MLA Yao Xing ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Ping Chen ; Jing Yang ; Feng Liang ; Shuangtao Liu ; Liqun Zhang."Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence".NANOSCALE RESEARCH LETTERS 14(2019):88.
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