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Effect of dual-temperature-grown InGaN/GaN multiple quantum wells on luminescence characteristics
Xiaowei Wang ;   Feng Liang ;   Degang Zhao ;   Desheng Jiang ;   Zongshun Liu ;   Jianjun Zhu ;   Jing Yang ;   Wenjie Wang
2019
Source PublicationJOURNAL OF ALLOYS AND COMPOUNDS
Volume790Pages:197-202
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29733
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Xiaowei Wang ; Feng Liang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Jing Yang ; Wenjie Wang. Effect of dual-temperature-grown InGaN/GaN multiple quantum wells on luminescence characteristics[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2019,790:197-202.
APA Xiaowei Wang ; Feng Liang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Jing Yang ; Wenjie Wang.(2019).Effect of dual-temperature-grown InGaN/GaN multiple quantum wells on luminescence characteristics.JOURNAL OF ALLOYS AND COMPOUNDS,790,197-202.
MLA Xiaowei Wang ; Feng Liang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Jing Yang ; Wenjie Wang."Effect of dual-temperature-grown InGaN/GaN multiple quantum wells on luminescence characteristics".JOURNAL OF ALLOYS AND COMPOUNDS 790(2019):197-202.
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