SEMI OpenIR  > 中科院半导体材料科学重点实验室
InGaAs/InP multi-quantum-well nanowires with a lower optical leakage loss on v-groove- patterned SOI substrates
YAJIE LI ;   MENGQI WANG ;   XULIANG ZHOU ;   PENGFEI WANG ;   WENYU YANG ;   FANGYUAN MENG ;   GUANGZHEN LUO ;   HONGYAN YU ;   JIAOQING PAN ;   WEI WANG
2019
Source PublicationOptics Express
Volume27Issue:2Pages:494-503
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29725
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
YAJIE LI ; MENGQI WANG ; XULIANG ZHOU ; PENGFEI WANG ; WENYU YANG ; FANGYUAN MENG ; GUANGZHEN LUO ; HONGYAN YU ; JIAOQING PAN ; WEI WANG. InGaAs/InP multi-quantum-well nanowires with a lower optical leakage loss on v-groove- patterned SOI substrates[J]. Optics Express,2019,27(2):494-503.
APA YAJIE LI ; MENGQI WANG ; XULIANG ZHOU ; PENGFEI WANG ; WENYU YANG ; FANGYUAN MENG ; GUANGZHEN LUO ; HONGYAN YU ; JIAOQING PAN ; WEI WANG.(2019).InGaAs/InP multi-quantum-well nanowires with a lower optical leakage loss on v-groove- patterned SOI substrates.Optics Express,27(2),494-503.
MLA YAJIE LI ; MENGQI WANG ; XULIANG ZHOU ; PENGFEI WANG ; WENYU YANG ; FANGYUAN MENG ; GUANGZHEN LUO ; HONGYAN YU ; JIAOQING PAN ; WEI WANG."InGaAs/InP multi-quantum-well nanowires with a lower optical leakage loss on v-groove- patterned SOI substrates".Optics Express 27.2(2019):494-503.
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