SEMI OpenIR  > 中科院半导体材料科学重点实验室
Remote heteroepitaxy of atomic layered hafnium disulfide on sapphire through hexagonal boron nitride
Denggui Wang;   Yong Lu;   Junhua Meng;   Xingwang Zhang;   Zhigang Yin;   Menglei Gao;   Ye Wang;   Likun Cheng;   Jingbi You ;   Jicai Zhang
2019
Source PublicationNanoscale
Volume11Issue:19Pages:9310-9318
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29721
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Denggui Wang; Yong Lu; Junhua Meng; Xingwang Zhang; Zhigang Yin; Menglei Gao; Ye Wang; Likun Cheng; Jingbi You ; Jicai Zhang. Remote heteroepitaxy of atomic layered hafnium disulfide on sapphire through hexagonal boron nitride[J]. Nanoscale,2019,11(19):9310-9318.
APA Denggui Wang; Yong Lu; Junhua Meng; Xingwang Zhang; Zhigang Yin; Menglei Gao; Ye Wang; Likun Cheng; Jingbi You ; Jicai Zhang.(2019).Remote heteroepitaxy of atomic layered hafnium disulfide on sapphire through hexagonal boron nitride.Nanoscale,11(19),9310-9318.
MLA Denggui Wang; Yong Lu; Junhua Meng; Xingwang Zhang; Zhigang Yin; Menglei Gao; Ye Wang; Likun Cheng; Jingbi You ; Jicai Zhang."Remote heteroepitaxy of atomic layered hafnium disulfide on sapphire through hexagonal boron nitride".Nanoscale 11.19(2019):9310-9318.
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