| Remote heteroepitaxy of atomic layered hafnium disulfide on sapphire through hexagonal boron nitride | |
| Denggui Wang; Yong Lu; Junhua Meng; Xingwang Zhang; Zhigang Yin; Menglei Gao; Ye Wang; Likun Cheng; Jingbi You ; Jicai Zhang | |
| 2019 | |
| Source Publication | Nanoscale
 |
| Volume | 11Issue:19Pages:9310-9318 |
| Indexed By | SCI |
| Language | 英语 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/29721 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Denggui Wang; Yong Lu; Junhua Meng; Xingwang Zhang; Zhigang Yin; Menglei Gao; Ye Wang; Likun Cheng; Jingbi You ; Jicai Zhang. Remote heteroepitaxy of atomic layered hafnium disulfide on sapphire through hexagonal boron nitride[J]. Nanoscale,2019,11(19):9310-9318. |
| APA | Denggui Wang; Yong Lu; Junhua Meng; Xingwang Zhang; Zhigang Yin; Menglei Gao; Ye Wang; Likun Cheng; Jingbi You ; Jicai Zhang.(2019).Remote heteroepitaxy of atomic layered hafnium disulfide on sapphire through hexagonal boron nitride.Nanoscale,11(19),9310-9318. |
| MLA | Denggui Wang; Yong Lu; Junhua Meng; Xingwang Zhang; Zhigang Yin; Menglei Gao; Ye Wang; Likun Cheng; Jingbi You ; Jicai Zhang."Remote heteroepitaxy of atomic layered hafnium disulfide on sapphire through hexagonal boron nitride".Nanoscale 11.19(2019):9310-9318. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Remote heteroepitaxy（2841KB） | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text | |
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