Remote heteroepitaxy of atomic layered hafnium disulfide on sapphire through hexagonal boron nitride | |
Denggui Wang; Yong Lu; Junhua Meng; Xingwang Zhang; Zhigang Yin; Menglei Gao; Ye Wang; Likun Cheng; Jingbi You ; Jicai Zhang | |
2019 | |
Source Publication | Nanoscale
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Volume | 11Issue:19Pages:9310-9318 |
Indexed By | SCI |
Language | 英语 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/29721 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Denggui Wang; Yong Lu; Junhua Meng; Xingwang Zhang; Zhigang Yin; Menglei Gao; Ye Wang; Likun Cheng; Jingbi You ; Jicai Zhang. Remote heteroepitaxy of atomic layered hafnium disulfide on sapphire through hexagonal boron nitride[J]. Nanoscale,2019,11(19):9310-9318. |
APA | Denggui Wang; Yong Lu; Junhua Meng; Xingwang Zhang; Zhigang Yin; Menglei Gao; Ye Wang; Likun Cheng; Jingbi You ; Jicai Zhang.(2019).Remote heteroepitaxy of atomic layered hafnium disulfide on sapphire through hexagonal boron nitride.Nanoscale,11(19),9310-9318. |
MLA | Denggui Wang; Yong Lu; Junhua Meng; Xingwang Zhang; Zhigang Yin; Menglei Gao; Ye Wang; Likun Cheng; Jingbi You ; Jicai Zhang."Remote heteroepitaxy of atomic layered hafnium disulfide on sapphire through hexagonal boron nitride".Nanoscale 11.19(2019):9310-9318. |
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Remote heteroepitaxy(2841KB) | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text |
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