SEMI OpenIR  > 中科院半导体材料科学重点实验室
基于InAs/GaSb二类超晶格结构的多光子吸收以及雪崩光电探测器的研究
赵成城
Subtype博士
2020-05
Degree Grantor中国科学院大学
Place of Conferral中国科学院半导体研究所
Language中文
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29703
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
赵成城. 基于InAs/GaSb二类超晶格结构的多光子吸收以及雪崩光电探测器的研究[D]. 中国科学院半导体研究所. 中国科学院大学,2020.
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2020011-公开-赵成城-博士-基于(5164KB)学位论文 限制开放CC BY-NC-SAApplication Full Text
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