SEMI OpenIR  > 中科院半导体材料科学重点实验室
Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers
G.G. Yan ;   X.F. Liu ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   W.S. Zhao ;   L. Wang ;   F. Zhang ;   X.H. Zhang ;   X.G. Li ;   G.S. Sun ;   Y.P. Zeng ;   Z.G. Wang
2019
Source PublicationJournal of Crystal Growth
Volume55Pages:1-4
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29681
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
G.G. Yan ; X.F. Liu ; Z.W. Shen ; Z.X. Wen ; J. Chen ; W.S. Zhao ; L. Wang ; F. Zhang ; X.H. Zhang ; X.G. Li ; G.S. Sun ; Y.P. Zeng ; Z.G. Wang. Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers[J]. Journal of Crystal Growth,2019,55:1-4.
APA G.G. Yan ; X.F. Liu ; Z.W. Shen ; Z.X. Wen ; J. Chen ; W.S. Zhao ; L. Wang ; F. Zhang ; X.H. Zhang ; X.G. Li ; G.S. Sun ; Y.P. Zeng ; Z.G. Wang.(2019).Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers.Journal of Crystal Growth,55,1-4.
MLA G.G. Yan ; X.F. Liu ; Z.W. Shen ; Z.X. Wen ; J. Chen ; W.S. Zhao ; L. Wang ; F. Zhang ; X.H. Zhang ; X.G. Li ; G.S. Sun ; Y.P. Zeng ; Z.G. Wang."Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers".Journal of Crystal Growth 55(2019):1-4.
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