SEMI OpenIR  > 中科院半导体材料科学重点实验室
Multiphoton absorption in type-II InAs/GaSb superlattice structure
Chengcheng Zhao;   Jianliang Huang;   Biying Nie;   Jinchuan Zhang;   Yanhua Zhang;   Wenquan Ma
2019
Source PublicationOptics Letters
Volume45Issue:1Pages:165-168
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29670
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Chengcheng Zhao; Jianliang Huang; Biying Nie; Jinchuan Zhang; Yanhua Zhang; Wenquan Ma. Multiphoton absorption in type-II InAs/GaSb superlattice structure[J]. Optics Letters,2019,45(1):165-168.
APA Chengcheng Zhao; Jianliang Huang; Biying Nie; Jinchuan Zhang; Yanhua Zhang; Wenquan Ma.(2019).Multiphoton absorption in type-II InAs/GaSb superlattice structure.Optics Letters,45(1),165-168.
MLA Chengcheng Zhao; Jianliang Huang; Biying Nie; Jinchuan Zhang; Yanhua Zhang; Wenquan Ma."Multiphoton absorption in type-II InAs/GaSb superlattice structure".Optics Letters 45.1(2019):165-168.
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