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Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-µm quantum dot lasers
Hui-Ming Hao;  Xiang-Bin Su;  Jing Zhang;  Hai-Qiao Ni;  Zhi-Chuan Niu
2019
Source PublicationChin. Phys. B
Volume28Issue:7Pages:078104
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29663
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Hui-Ming Hao;Xiang-Bin Su;Jing Zhang;Hai-Qiao Ni;Zhi-Chuan Niu. Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-µm quantum dot lasers[J]. Chin. Phys. B,2019,28(7):078104.
APA Hui-Ming Hao;Xiang-Bin Su;Jing Zhang;Hai-Qiao Ni;Zhi-Chuan Niu.(2019).Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-µm quantum dot lasers.Chin. Phys. B,28(7),078104.
MLA Hui-Ming Hao;Xiang-Bin Su;Jing Zhang;Hai-Qiao Ni;Zhi-Chuan Niu."Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-µm quantum dot lasers".Chin. Phys. B 28.7(2019):078104.
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