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Atomistic Study of Lateral Charge Diffusion Degradation During Program/Erase Cycling in 3-D NAND Flash Memory | |
JIXUAN WU; JIEZHI CHEN (Senior Member, IEEE); XIANGWEI JIANG(Member, IEEE) | |
2019 | |
Source Publication | IEEE Journal of the Electron Devices Society
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Volume | 7Pages:626-631 |
Indexed By | SCI |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/29652 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | JIXUAN WU; JIEZHI CHEN . Atomistic Study of Lateral Charge Diffusion Degradation During Program/Erase Cycling in 3-D NAND Flash Memory[J]. IEEE Journal of the Electron Devices Society,2019,7:626-631. |
APA | JIXUAN WU; JIEZHI CHEN .(2019).Atomistic Study of Lateral Charge Diffusion Degradation During Program/Erase Cycling in 3-D NAND Flash Memory.IEEE Journal of the Electron Devices Society,7,626-631. |
MLA | JIXUAN WU; JIEZHI CHEN ."Atomistic Study of Lateral Charge Diffusion Degradation During Program/Erase Cycling in 3-D NAND Flash Memory".IEEE Journal of the Electron Devices Society 7(2019):626-631. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
Atomistic Study of L(1768KB) | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text |
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