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Atomistic Study of Lateral Charge Diffusion Degradation During Program/Erase Cycling in 3-D NAND Flash Memory
JIXUAN WU;   JIEZHI CHEN (Senior Member, IEEE);   XIANGWEI JIANG(Member, IEEE)
2019
Source PublicationIEEE Journal of the Electron Devices Society
Volume7Pages:626-631
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29652
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
JIXUAN WU; JIEZHI CHEN . Atomistic Study of Lateral Charge Diffusion Degradation During Program/Erase Cycling in 3-D NAND Flash Memory[J]. IEEE Journal of the Electron Devices Society,2019,7:626-631.
APA JIXUAN WU; JIEZHI CHEN .(2019).Atomistic Study of Lateral Charge Diffusion Degradation During Program/Erase Cycling in 3-D NAND Flash Memory.IEEE Journal of the Electron Devices Society,7,626-631.
MLA JIXUAN WU; JIEZHI CHEN ."Atomistic Study of Lateral Charge Diffusion Degradation During Program/Erase Cycling in 3-D NAND Flash Memory".IEEE Journal of the Electron Devices Society 7(2019):626-631.
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