Atomistic Study of Lateral Charge Diffusion Degradation During Program/Erase Cycling in 3-D NAND Flash Memory

	Atomistic Study of Lateral Charge Diffusion Degradation During Program/Erase Cycling in 3-D NAND Flash Memory
	JIXUAN WU; JIEZHI CHEN (Senior Member, IEEE); XIANGWEI JIANG(Member, IEEE)
	2019
Source Publication	IEEE Journal of the Electron Devices Society
Volume	7 Pages:626-631
Indexed By	SCI
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/29652
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	JIXUAN WU; JIEZHI CHEN . Atomistic Study of Lateral Charge Diffusion Degradation During Program/Erase Cycling in 3-D NAND Flash Memory[J]. IEEE Journal of the Electron Devices Society,2019,7:626-631.
APA	JIXUAN WU; JIEZHI CHEN .(2019).Atomistic Study of Lateral Charge Diffusion Degradation During Program/Erase Cycling in 3-D NAND Flash Memory.IEEE Journal of the Electron Devices Society,7,626-631.
MLA	JIXUAN WU; JIEZHI CHEN ."Atomistic Study of Lateral Charge Diffusion Degradation During Program/Erase Cycling in 3-D NAND Flash Memory".IEEE Journal of the Electron Devices Society 7(2019):626-631.

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