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γ-GeSe: A two-dimensional ferroelectric material with doping-induced ferromagnetism
Chang Liu;   Shan Guan;   Huabing Yin;   Wenhui Wan;   Yuanxu Wang;   Ying Zhang
2019
Source PublicationApplied Physics Letters
Volume115Pages:252904
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29649
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Chang Liu; Shan Guan; Huabing Yin; Wenhui Wan; Yuanxu Wang; Ying Zhang. γ-GeSe: A two-dimensional ferroelectric material with doping-induced ferromagnetism[J]. Applied Physics Letters,2019,115:252904.
APA Chang Liu; Shan Guan; Huabing Yin; Wenhui Wan; Yuanxu Wang; Ying Zhang.(2019).γ-GeSe: A two-dimensional ferroelectric material with doping-induced ferromagnetism.Applied Physics Letters,115,252904.
MLA Chang Liu; Shan Guan; Huabing Yin; Wenhui Wan; Yuanxu Wang; Ying Zhang."γ-GeSe: A two-dimensional ferroelectric material with doping-induced ferromagnetism".Applied Physics Letters 115(2019):252904.
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