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Nonvolatile memristor based on heterostructure of 2D room-temperature ferroelectric α-In 2 Se 3 and WSe 2
Huai Yang;  Mengqi Xiao;  Yu Cui;  Longfei Pan;  Kai Zhao;  Zhongming Wei
2019
Source PublicationScience China Information Sciences
Volume62Issue:12Pages:220404
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29642
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Huai Yang;Mengqi Xiao;Yu Cui;Longfei Pan;Kai Zhao;Zhongming Wei. Nonvolatile memristor based on heterostructure of 2D room-temperature ferroelectric α-In 2 Se 3 and WSe 2[J]. Science China Information Sciences,2019,62(12):220404.
APA Huai Yang;Mengqi Xiao;Yu Cui;Longfei Pan;Kai Zhao;Zhongming Wei.(2019).Nonvolatile memristor based on heterostructure of 2D room-temperature ferroelectric α-In 2 Se 3 and WSe 2.Science China Information Sciences,62(12),220404.
MLA Huai Yang;Mengqi Xiao;Yu Cui;Longfei Pan;Kai Zhao;Zhongming Wei."Nonvolatile memristor based on heterostructure of 2D room-temperature ferroelectric α-In 2 Se 3 and WSe 2".Science China Information Sciences 62.12(2019):220404.
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