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Spin-charge conversion in InSe bilayers
Ma Zhou;   Dong Zhang;   Shengbin Yu;   Zhihan Huang;   Yingda Chen;   Wen Yang;   Kai Chang
2019
Source PublicationPHYSICAL REVIEW B
Volume99Issue:15Pages:155402
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29640
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Ma Zhou; Dong Zhang; Shengbin Yu; Zhihan Huang; Yingda Chen; Wen Yang; Kai Chang. Spin-charge conversion in InSe bilayers[J]. PHYSICAL REVIEW B,2019,99(15):155402.
APA Ma Zhou; Dong Zhang; Shengbin Yu; Zhihan Huang; Yingda Chen; Wen Yang; Kai Chang.(2019).Spin-charge conversion in InSe bilayers.PHYSICAL REVIEW B,99(15),155402.
MLA Ma Zhou; Dong Zhang; Shengbin Yu; Zhihan Huang; Yingda Chen; Wen Yang; Kai Chang."Spin-charge conversion in InSe bilayers".PHYSICAL REVIEW B 99.15(2019):155402.
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