Spin-charge conversion in InSe bilayers

	Spin-charge conversion in InSe bilayers
	Ma Zhou; Dong Zhang; Shengbin Yu; Zhihan Huang; Yingda Chen; Wen Yang; Kai Chang
	2019
Source Publication	PHYSICAL REVIEW B
Volume	99 Issue:15 Pages:155402
Indexed By	SCI
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/29640
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Ma Zhou; Dong Zhang; Shengbin Yu; Zhihan Huang; Yingda Chen; Wen Yang; Kai Chang. Spin-charge conversion in InSe bilayers[J]. PHYSICAL REVIEW B,2019,99(15):155402.
APA	Ma Zhou; Dong Zhang; Shengbin Yu; Zhihan Huang; Yingda Chen; Wen Yang; Kai Chang.(2019).Spin-charge conversion in InSe bilayers.PHYSICAL REVIEW B,99(15),155402.
MLA	Ma Zhou; Dong Zhang; Shengbin Yu; Zhihan Huang; Yingda Chen; Wen Yang; Kai Chang."Spin-charge conversion in InSe bilayers".PHYSICAL REVIEW B 99.15(2019):155402.

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