Knowledge Management System Of Institute of Semiconductors,CAS
Spin-charge conversion in InSe bilayers | |
Ma Zhou; Dong Zhang; Shengbin Yu; Zhihan Huang; Yingda Chen; Wen Yang; Kai Chang | |
2019 | |
Source Publication | PHYSICAL REVIEW B
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Volume | 99Issue:15Pages:155402 |
Indexed By | SCI |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/29640 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Ma Zhou; Dong Zhang; Shengbin Yu; Zhihan Huang; Yingda Chen; Wen Yang; Kai Chang. Spin-charge conversion in InSe bilayers[J]. PHYSICAL REVIEW B,2019,99(15):155402. |
APA | Ma Zhou; Dong Zhang; Shengbin Yu; Zhihan Huang; Yingda Chen; Wen Yang; Kai Chang.(2019).Spin-charge conversion in InSe bilayers.PHYSICAL REVIEW B,99(15),155402. |
MLA | Ma Zhou; Dong Zhang; Shengbin Yu; Zhihan Huang; Yingda Chen; Wen Yang; Kai Chang."Spin-charge conversion in InSe bilayers".PHYSICAL REVIEW B 99.15(2019):155402. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
Spin-charge conversi(1549KB) | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text |
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