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Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process
Shuangtao Liu;  Jing Yang;  Degang Zhao;  Desheng Jiang;  Jianjun Zhu;  Feng Liang;  Ping Chen;  Zongshun Liu;  Yao Xing;  Liyuan Peng
2019
Source PublicationNanoscale Research Letters
Volume14Pages:280
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29635
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Shuangtao Liu;Jing Yang;Degang Zhao;Desheng Jiang;Jianjun Zhu;Feng Liang;Ping Chen;Zongshun Liu;Yao Xing;Liyuan Peng. Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process[J]. Nanoscale Research Letters,2019,14:280.
APA Shuangtao Liu;Jing Yang;Degang Zhao;Desheng Jiang;Jianjun Zhu;Feng Liang;Ping Chen;Zongshun Liu;Yao Xing;Liyuan Peng.(2019).Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process.Nanoscale Research Letters,14,280.
MLA Shuangtao Liu;Jing Yang;Degang Zhao;Desheng Jiang;Jianjun Zhu;Feng Liang;Ping Chen;Zongshun Liu;Yao Xing;Liyuan Peng."Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process".Nanoscale Research Letters 14(2019):280.
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