SEMI OpenIR  > 半导体超晶格国家重点实验室
Gate defined quantum dot realized in a single crystalline InSb nanosheet
Jianhong Xue;  Yuanjie Chen;  Dong Pan;  Ji-Yin Wang;  Jianhua Zhao;  Shaoyun Huang;  H. Q. Xu
2019
Source PublicationApplied Physics Letters
Volume114Pages:023108
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29619
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Jianhong Xue;Yuanjie Chen;Dong Pan;Ji-Yin Wang;Jianhua Zhao;Shaoyun Huang;H. Q. Xu. Gate defined quantum dot realized in a single crystalline InSb nanosheet[J]. Applied Physics Letters,2019,114:023108.
APA Jianhong Xue;Yuanjie Chen;Dong Pan;Ji-Yin Wang;Jianhua Zhao;Shaoyun Huang;H. Q. Xu.(2019).Gate defined quantum dot realized in a single crystalline InSb nanosheet.Applied Physics Letters,114,023108.
MLA Jianhong Xue;Yuanjie Chen;Dong Pan;Ji-Yin Wang;Jianhua Zhao;Shaoyun Huang;H. Q. Xu."Gate defined quantum dot realized in a single crystalline InSb nanosheet".Applied Physics Letters 114(2019):023108.
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