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Vis−IR Wide-Spectrum Photodetector at Room Temperature Based on p−n Junction-Type GaAs 1−x Sb x /InAs Core−Shell Nanowire
Xinzhe Wang;  Dong Pan;  Yuxiang Han;  Mei Sun;  Jianhua Zhao;  Qing Chen
2019
Source PublicationACS Applied Materials & Interfaces
Volume11Issue:42Pages:38973-38981
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29617
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Xinzhe Wang;Dong Pan;Yuxiang Han;Mei Sun;Jianhua Zhao;Qing Chen. Vis−IR Wide-Spectrum Photodetector at Room Temperature Based on p−n Junction-Type GaAs 1−x Sb x /InAs Core−Shell Nanowire[J]. ACS Applied Materials & Interfaces,2019,11(42):38973-38981.
APA Xinzhe Wang;Dong Pan;Yuxiang Han;Mei Sun;Jianhua Zhao;Qing Chen.(2019).Vis−IR Wide-Spectrum Photodetector at Room Temperature Based on p−n Junction-Type GaAs 1−x Sb x /InAs Core−Shell Nanowire.ACS Applied Materials & Interfaces,11(42),38973-38981.
MLA Xinzhe Wang;Dong Pan;Yuxiang Han;Mei Sun;Jianhua Zhao;Qing Chen."Vis−IR Wide-Spectrum Photodetector at Room Temperature Based on p−n Junction-Type GaAs 1−x Sb x /InAs Core−Shell Nanowire".ACS Applied Materials & Interfaces 11.42(2019):38973-38981.
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