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Investigation of pattern-orientation on stress in GaN grown on Si (111) substrate in lateral confinement epitaxy
Xiaoyu Tan ;   Xiaoli Ji ;   Tongbo Wei ;   Xilin Li ;   Xuecheng Wei ;   Junxi Wang ;   Jinmin Li
2018
Source PublicationSUPERLATTICES AND MICROSTRUCTURES
Volume122Pages:336-342
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29612
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Xiaoyu Tan ; Xiaoli Ji ; Tongbo Wei ; Xilin Li ; Xuecheng Wei ; Junxi Wang ; Jinmin Li. Investigation of pattern-orientation on stress in GaN grown on Si (111) substrate in lateral confinement epitaxy[J]. SUPERLATTICES AND MICROSTRUCTURES,2018,122:336-342.
APA Xiaoyu Tan ; Xiaoli Ji ; Tongbo Wei ; Xilin Li ; Xuecheng Wei ; Junxi Wang ; Jinmin Li.(2018).Investigation of pattern-orientation on stress in GaN grown on Si (111) substrate in lateral confinement epitaxy.SUPERLATTICES AND MICROSTRUCTURES,122,336-342.
MLA Xiaoyu Tan ; Xiaoli Ji ; Tongbo Wei ; Xilin Li ; Xuecheng Wei ; Junxi Wang ; Jinmin Li."Investigation of pattern-orientation on stress in GaN grown on Si (111) substrate in lateral confinement epitaxy".SUPERLATTICES AND MICROSTRUCTURES 122(2018):336-342.
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