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AlGaN/GaN Heterojunction Bipolar Transistor With Selective-Area Grown Emitter and Improved Base Contact
Lian Zhang ;   Zhe Cheng;   Jianping Zeng ;   Hongxi Lu;   Lifang Jia;   Yujie Ai;   Yun Zhang
2019
Source PublicationIEEE TRANSACTIONS ON ELECTRON DEVICES
Volume66Issue:3Pages:1197-1201
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29600
Collection固态光电信息技术实验室
Recommended Citation
GB/T 7714
Lian Zhang ; Zhe Cheng; Jianping Zeng ; Hongxi Lu; Lifang Jia; Yujie Ai; Yun Zhang;. AlGaN/GaN Heterojunction Bipolar Transistor With Selective-Area Grown Emitter and Improved Base Contact[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2019,66(3):1197-1201.
APA Lian Zhang ; Zhe Cheng; Jianping Zeng ; Hongxi Lu; Lifang Jia; Yujie Ai; Yun Zhang;.(2019).AlGaN/GaN Heterojunction Bipolar Transistor With Selective-Area Grown Emitter and Improved Base Contact.IEEE TRANSACTIONS ON ELECTRON DEVICES,66(3),1197-1201.
MLA Lian Zhang ; Zhe Cheng; Jianping Zeng ; Hongxi Lu; Lifang Jia; Yujie Ai; Yun Zhang;."AlGaN/GaN Heterojunction Bipolar Transistor With Selective-Area Grown Emitter and Improved Base Contact".IEEE TRANSACTIONS ON ELECTRON DEVICES 66.3(2019):1197-1201.
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