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Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate
Hongliang Chang ;   Zhaolong Chen;   Weijiang Li;   Jianchang Yan;   Rui Hou;   Shenyuan Yang;   Zhiqiang Liu;   Guodong Yuan ;   Junxi Wang;   Jinmin Li;   Peng Gao;   Tongbo Wei
2019
Source PublicationApplied Physics Letters
Volume114Pages:091107
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29572
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Hongliang Chang ; Zhaolong Chen; Weijiang Li; Jianchang Yan; Rui Hou; Shenyuan Yang; Zhiqiang Liu; Guodong Yuan ; Junxi Wang; Jinmin Li; Peng Gao; Tongbo Wei. Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate[J]. Applied Physics Letters,2019,114:091107.
APA Hongliang Chang ; Zhaolong Chen; Weijiang Li; Jianchang Yan; Rui Hou; Shenyuan Yang; Zhiqiang Liu; Guodong Yuan ; Junxi Wang; Jinmin Li; Peng Gao; Tongbo Wei.(2019).Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate.Applied Physics Letters,114,091107.
MLA Hongliang Chang ; Zhaolong Chen; Weijiang Li; Jianchang Yan; Rui Hou; Shenyuan Yang; Zhiqiang Liu; Guodong Yuan ; Junxi Wang; Jinmin Li; Peng Gao; Tongbo Wei."Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate".Applied Physics Letters 114(2019):091107.
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