SEMI OpenIR  > 中科院半导体材料科学重点实验室
Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal
Ding Yu ;   Guiying Shen ;   Hui Xie ;   Jingming Liu ;   Jing Sun ;   Youwen Zhao
2019
Source PublicationChinese Physics B
Volume28Issue:5Pages:057102
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29567
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Ding Yu ; Guiying Shen ; Hui Xie ; Jingming Liu ; Jing Sun ; Youwen Zhao. Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal[J]. Chinese Physics B,2019,28(5):057102.
APA Ding Yu ; Guiying Shen ; Hui Xie ; Jingming Liu ; Jing Sun ; Youwen Zhao.(2019).Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal.Chinese Physics B,28(5),057102.
MLA Ding Yu ; Guiying Shen ; Hui Xie ; Jingming Liu ; Jing Sun ; Youwen Zhao."Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal".Chinese Physics B 28.5(2019):057102.
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