| Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal | |
| Ding Yu ; Guiying Shen ; Hui Xie ; Jingming Liu ; Jing Sun ; Youwen Zhao | |
| 2019 | |
| Source Publication | Chinese Physics B
 |
| Volume | 28Issue:5Pages:057102 |
| Indexed By | SCI |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/29567 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Ding Yu ; Guiying Shen ; Hui Xie ; Jingming Liu ; Jing Sun ; Youwen Zhao. Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal[J]. Chinese Physics B,2019,28(5):057102. |
| APA | Ding Yu ; Guiying Shen ; Hui Xie ; Jingming Liu ; Jing Sun ; Youwen Zhao.(2019).Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal.Chinese Physics B,28(5),057102. |
| MLA | Ding Yu ; Guiying Shen ; Hui Xie ; Jingming Liu ; Jing Sun ; Youwen Zhao."Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal".Chinese Physics B 28.5(2019):057102. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Mechanism of Free el（330KB） | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text | |
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