Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal | |
Ding Yu ; Guiying Shen ; Hui Xie ; Jingming Liu ; Jing Sun ; Youwen Zhao | |
2019 | |
Source Publication | Chinese Physics B
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Volume | 28Issue:5Pages:057102 |
Indexed By | SCI |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/29567 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Ding Yu ; Guiying Shen ; Hui Xie ; Jingming Liu ; Jing Sun ; Youwen Zhao. Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal[J]. Chinese Physics B,2019,28(5):057102. |
APA | Ding Yu ; Guiying Shen ; Hui Xie ; Jingming Liu ; Jing Sun ; Youwen Zhao.(2019).Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal.Chinese Physics B,28(5),057102. |
MLA | Ding Yu ; Guiying Shen ; Hui Xie ; Jingming Liu ; Jing Sun ; Youwen Zhao."Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal".Chinese Physics B 28.5(2019):057102. |
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Mechanism of Free el(330KB) | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text |
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