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VGF growth of high quality InAs single crystals with low dislocation density
Jun Yang;  Wei Lu;  Manlong Duan;  Hui Xie;  Guiying Shen;  Jingmin Liu;  Zhiyuan Dong;  Youwen Zhao
2019
Source PublicationJournal of Crystal Growth
Volume531Pages:125350
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29566
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Jun Yang;Wei Lu;Manlong Duan;Hui Xie;Guiying Shen;Jingmin Liu;Zhiyuan Dong;Youwen Zhao. VGF growth of high quality InAs single crystals with low dislocation density[J]. Journal of Crystal Growth,2019,531:125350.
APA Jun Yang;Wei Lu;Manlong Duan;Hui Xie;Guiying Shen;Jingmin Liu;Zhiyuan Dong;Youwen Zhao.(2019).VGF growth of high quality InAs single crystals with low dislocation density.Journal of Crystal Growth,531,125350.
MLA Jun Yang;Wei Lu;Manlong Duan;Hui Xie;Guiying Shen;Jingmin Liu;Zhiyuan Dong;Youwen Zhao."VGF growth of high quality InAs single crystals with low dislocation density".Journal of Crystal Growth 531(2019):125350.
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