Wet etching generation of dislocation pits with clear facets in LEC-InAs single crystals | |
Jing Sun ; Guiying Shen ; Hui Xie ; Jingming Liu ; Ding Yu ; Youwen Zhao | |
2019 | |
Source Publication | Journal of Crystal Growth
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Volume | 526Pages:125237 |
Indexed By | SCI |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/29565 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Jing Sun ; Guiying Shen ; Hui Xie ; Jingming Liu ; Ding Yu ; Youwen Zhao. Wet etching generation of dislocation pits with clear facets in LEC-InAs single crystals[J]. Journal of Crystal Growth,2019,526:125237. |
APA | Jing Sun ; Guiying Shen ; Hui Xie ; Jingming Liu ; Ding Yu ; Youwen Zhao.(2019).Wet etching generation of dislocation pits with clear facets in LEC-InAs single crystals.Journal of Crystal Growth,526,125237. |
MLA | Jing Sun ; Guiying Shen ; Hui Xie ; Jingming Liu ; Ding Yu ; Youwen Zhao."Wet etching generation of dislocation pits with clear facets in LEC-InAs single crystals".Journal of Crystal Growth 526(2019):125237. |
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Wet etching generati(1359KB) | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text |
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