SEMI OpenIR  > 中科院半导体材料科学重点实验室
Unique and Tunable Photodetecting Performance for Two- Dimensional Layered MoSe 2 /WSe 2 p−n Junction on the 4H-SiC Substrate
Wan G(万刚)
2019
Source PublicationWei Gao; Feng Zhang; Zhaoqiang Zheng; Jingbo Li
Volume11Issue:21Pages:19277-19285
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29563
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Wan G. Unique and Tunable Photodetecting Performance for Two- Dimensional Layered MoSe 2 /WSe 2 p−n Junction on the 4H-SiC Substrate[J]. Wei Gao; Feng Zhang; Zhaoqiang Zheng; Jingbo Li,2019,11(21):19277-19285.
APA Wan G.(2019).Unique and Tunable Photodetecting Performance for Two- Dimensional Layered MoSe 2 /WSe 2 p−n Junction on the 4H-SiC Substrate.Wei Gao; Feng Zhang; Zhaoqiang Zheng; Jingbo Li,11(21),19277-19285.
MLA Wan G."Unique and Tunable Photodetecting Performance for Two- Dimensional Layered MoSe 2 /WSe 2 p−n Junction on the 4H-SiC Substrate".Wei Gao; Feng Zhang; Zhaoqiang Zheng; Jingbo Li 11.21(2019):19277-19285.
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