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Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension
Zheng-Xin Wen;   Feng Zhang;   Zhan-Wei Shen;   Jun Chen;   Ya-Wei He;   Guo-Guo Yan;   Xing-Fang Liu;   Wan-Shun Zhao;   Lei Wang;   Guo-Sheng Sun;   Yi-Ping Zeng
2019
Source PublicationChinese Physics B
Volume28Issue:6Pages:068504
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29562
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Zheng-Xin Wen; Feng Zhang; Zhan-Wei Shen; Jun Chen; Ya-Wei He; Guo-Guo Yan; Xing-Fang Liu; Wan-Shun Zhao; Lei Wang; Guo-Sheng Sun; Yi-Ping Zeng. Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension[J]. Chinese Physics B,2019,28(6):068504.
APA Zheng-Xin Wen; Feng Zhang; Zhan-Wei Shen; Jun Chen; Ya-Wei He; Guo-Guo Yan; Xing-Fang Liu; Wan-Shun Zhao; Lei Wang; Guo-Sheng Sun; Yi-Ping Zeng.(2019).Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension.Chinese Physics B,28(6),068504.
MLA Zheng-Xin Wen; Feng Zhang; Zhan-Wei Shen; Jun Chen; Ya-Wei He; Guo-Guo Yan; Xing-Fang Liu; Wan-Shun Zhao; Lei Wang; Guo-Sheng Sun; Yi-Ping Zeng."Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension".Chinese Physics B 28.6(2019):068504.
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