The composition and interfacial properties of annealed AlN films deposited on 4H-SiC by atomic layer deposition | |
Jun Chen ; Bowen Lv ; Feng Zhang ; Yinshu Wang ; Xingfang Liu ; Guoguo Yan ; Zhanwei Shen ; Zhengxin Wen ; Lei Wang ; Wanshun Zhao ; Guosheng Sun ; Chao Liu ; Yiping Zeng | |
2019 | |
Source Publication | Materials Science in Semiconductor Processing
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Volume | 94Pages:107-115 |
Indexed By | SCI |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/29561 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Jun Chen ; Bowen Lv ; Feng Zhang ; Yinshu Wang ; Xingfang Liu ; Guoguo Yan ; Zhanwei Shen ; Zhengxin Wen ; Lei Wang ; Wanshun Zhao ; Guosheng Sun ; Chao Liu ; Yiping Zeng. The composition and interfacial properties of annealed AlN films deposited on 4H-SiC by atomic layer deposition[J]. Materials Science in Semiconductor Processing,2019,94:107-115. |
APA | Jun Chen ; Bowen Lv ; Feng Zhang ; Yinshu Wang ; Xingfang Liu ; Guoguo Yan ; Zhanwei Shen ; Zhengxin Wen ; Lei Wang ; Wanshun Zhao ; Guosheng Sun ; Chao Liu ; Yiping Zeng.(2019).The composition and interfacial properties of annealed AlN films deposited on 4H-SiC by atomic layer deposition.Materials Science in Semiconductor Processing,94,107-115. |
MLA | Jun Chen ; Bowen Lv ; Feng Zhang ; Yinshu Wang ; Xingfang Liu ; Guoguo Yan ; Zhanwei Shen ; Zhengxin Wen ; Lei Wang ; Wanshun Zhao ; Guosheng Sun ; Chao Liu ; Yiping Zeng."The composition and interfacial properties of annealed AlN films deposited on 4H-SiC by atomic layer deposition".Materials Science in Semiconductor Processing 94(2019):107-115. |
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